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Dry-etch Fin patterning on SOI: transition from 32 to 22nm node on a 6T-SRAM cell

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorErcken, Monique
dc.contributor.authorVeloso, Anabela
dc.contributor.authorDemand, Marc
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-17T21:17:36Z
dc.date.available2021-10-17T21:17:36Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14892
dc.sourceIIOimport
dc.titleDry-etch Fin patterning on SOI: transition from 32 to 22nm node on a 6T-SRAM cell
dc.typeOral presentation
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.conference31st International Symposium on Dry Process - DPS
dc.source.conferencedate22/09/2009
dc.source.conferencelocationBusan Korea
imec.availabilityPublished - imec


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