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Spacer etch process for self-aligned bouble patterning of 32nm half-pitch

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorDekkers, Harold
dc.contributor.authorVangoidsenhoven, Diziana
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-17T21:17:37Z
dc.date.available2021-10-17T21:17:37Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14893
dc.sourceIIOimport
dc.titleSpacer etch process for self-aligned bouble patterning of 32nm half-pitch
dc.typeMeeting abstract
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorVangoidsenhoven, Diziana
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference2nd International PESM Workshop on Plasma Etch and Strip in Microelectronics - PESM
dc.source.conferencedate26/02/2009
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - open access


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