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New insights into the wide ID range Channel Hot-Carrier degradation in high-k based devices

dc.contributor.authorAmat, Esteve
dc.contributor.authorRodríguez, Rosana
dc.contributor.authorNafria, Montse
dc.contributor.authorAymerich, Xavier
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T21:17:46Z
dc.date.available2021-10-17T21:17:46Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14898
dc.sourceIIOimport
dc.titleNew insights into the wide ID range Channel Hot-Carrier degradation in high-k based devices
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1028
dc.source.endpage1032
dc.source.conference47th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate26/04/2009
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - open access


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