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Recombination of O and H atoms with low-k SiOCH films pretreated in He plasma

dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorBraginsky, O.V.
dc.contributor.authorKovalev, A.S.
dc.contributor.authorLopaev, D.V.
dc.contributor.authorMankelevich, Y.A.
dc.contributor.authorRakhimova, T.V.
dc.contributor.authorMalykhin, E.M.
dc.contributor.authorProshina, O.V.
dc.contributor.authorRakhimov, A.T.
dc.contributor.authorVasilieva, A.N.
dc.contributor.authorVoloshin, D.G.
dc.contributor.authorZyryanov, S.M.
dc.date.accessioned2021-10-17T21:19:18Z
dc.date.available2021-10-17T21:19:18Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14934
dc.sourceIIOimport
dc.titleRecombination of O and H atoms with low-k SiOCH films pretreated in He plasma
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage1156-D01-06
dc.source.conferenceMaterials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics
dc.source.conferencedate14/04/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1156


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