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Correlation of fin shape fluctuations to FinFET electrical variability and noise margins of 6-T SRAM cells

dc.contributor.authorBaravelli, Emanuele
dc.contributor.authorDe Marchi, L.
dc.contributor.authorJurczak, Gosia
dc.contributor.authorSpeciale, Nicolo
dc.date.accessioned2021-10-17T21:19:38Z
dc.date.available2021-10-17T21:19:38Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14940
dc.sourceIIOimport
dc.titleCorrelation of fin shape fluctuations to FinFET electrical variability and noise margins of 6-T SRAM cells
dc.typeProceedings paper
dc.contributor.imecauthorJurczak, Gosia
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage19
dc.source.endpage22
dc.source.conferenceUltimate Integration on Silicon Conference - ULIS
dc.source.conferencedate18/03/2009
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - open access


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