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Optimization of Al2O3 based VARIOT engineered tunnel dielectric for floating gate flash scaling

dc.contributor.authorBlomme, Pieter
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-17T21:24:44Z
dc.date.available2021-10-17T21:24:44Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15008
dc.sourceIIOimport
dc.titleOptimization of Al2O3 based VARIOT engineered tunnel dielectric for floating gate flash scaling
dc.typeProceedings paper
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage84
dc.source.endpage85
dc.source.conferenceInternational Memory Workshop - IMW
dc.source.conferencedate10/05/2009
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access


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