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Si passivation for high-k gate dielectrics on GE MOSFETs: further developments and understanding

dc.contributor.authorCaymax, Matty
dc.contributor.authorMitard, Jerome
dc.contributor.authorMartens, Koen
dc.contributor.authorYang, Lijun
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMeuris, Marc
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-17T21:32:20Z
dc.date.available2021-10-17T21:32:20Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15074
dc.sourceIIOimport
dc.titleSi passivation for high-k gate dielectrics on GE MOSFETs: further developments and understanding
dc.typeMeeting abstract
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage27
dc.source.conferenceJoint American Vacuum Society (AVS) - Taiwan Annual Physical Society Meeting on "Beyond Si CMOS"
dc.source.conferencedate20/01/2009
dc.source.conferencelocationChanghua Taiwan
imec.availabilityPublished - imec
imec.internalnotesPublished in Book of Abstracts


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