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Defect aspects of Ge-on-Si materials and devices

dc.contributor.authorClaeys, Cor
dc.contributor.authorEneman, Geert
dc.contributor.authorWang, Gang
dc.contributor.authorSouriau, Laurent
dc.contributor.authorLoo, Roger
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-17T21:37:01Z
dc.date.available2021-10-17T21:37:01Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15108
dc.sourceIIOimport
dc.titleDefect aspects of Ge-on-Si materials and devices
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage99
dc.source.endpage109
dc.source.conferenceInternational Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors - ULSIC
dc.source.conferencedate5/07/2009
dc.source.conferencelocationXi'an China
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 22, issue 1


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