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NiO resistive switching material integrated at the bottom of via holes from localized oxidation of nickel metallic layer

dc.contributor.authorCourtade, Lorene
dc.contributor.authorMuller, Ch.
dc.contributor.authorTurquat, Ch.
dc.contributor.authorLisoni, Judit
dc.contributor.authorGoux, Ludovic
dc.contributor.authorDeleruyelle, D.
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-17T21:40:36Z
dc.date.available2021-10-17T21:40:36Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15132
dc.sourceIIOimport
dc.titleNiO resistive switching material integrated at the bottom of via holes from localized oxidation of nickel metallic layer
dc.typeOral presentation
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewno
dc.source.conference18th Workshop Materials for Advanced Metallization - MAM
dc.source.conferencedate8/03/2009
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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