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Nanoscale electrical characterization of CuTCNQ layers by conductive AFM in view of their use as resistive random access memory (RRAM)

dc.contributor.authorDeleruyelle, Damien
dc.contributor.authorThomas, Maryline
dc.contributor.authorMuller, Christophe
dc.contributor.authorMuller, Robert
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.contributor.authorKever, Thorsten
dc.contributor.authorBoettger, Ulrich
dc.contributor.authorWaser, Rainer
dc.date.accessioned2021-10-17T21:55:03Z
dc.date.available2021-10-17T21:55:03Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15218
dc.sourceIIOimport
dc.titleNanoscale electrical characterization of CuTCNQ layers by conductive AFM in view of their use as resistive random access memory (RRAM)
dc.typeOral presentation
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium G: Fundamentals and Technology of Multifunctional Oxide Thin Films
dc.source.conferencedate8/06/2009
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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