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Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
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1934 since deposited on 2021-10-17
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Acq. date: 2025-10-24
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Views
1934 since deposited on 2021-10-17
425item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations