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Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4

dc.contributor.authorDerluyn, Joff
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVisalli, Domenica
dc.contributor.authorLorenz, Anne
dc.contributor.authorMarcon, Denis
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorGeens, Karen
dc.contributor.authorSijmus, Bram
dc.contributor.authorViaene, John
dc.contributor.authorKang, Xuanwu
dc.contributor.authorDas, Jo
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorGermain, Marianne
dc.date.accessioned2021-10-17T21:57:04Z
dc.date.available2021-10-17T21:57:04Z
dc.date.issued2009-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15228
dc.sourceIIOimport
dc.titleLow leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.source.peerreviewno
dc.source.beginpage157
dc.source.endpage160
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2009
dc.source.conferencelocationBaltimore, MD USA
imec.availabilityPublished - imec


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