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Measurement and analysis of parasitic capacitance in FinFETs with high-k dielectrics and metal-gate stack

dc.contributor.authorDixit, Abhisek
dc.contributor.authorBandhyopadhyay, Anirban
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-17T21:59:29Z
dc.date.available2021-10-17T21:59:29Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15240
dc.sourceIIOimport
dc.titleMeasurement and analysis of parasitic capacitance in FinFETs with high-k dielectrics and metal-gate stack
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage253
dc.source.endpage258
dc.source.conference22nd International Conference on VLSI Design
dc.source.conferencedate5/01/2009
dc.source.conferencelocationNew Delhi India
imec.availabilityPublished - imec


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