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dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorYang, Rui
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorWang, Gang
dc.contributor.authorMitard, Jerome
dc.contributor.authorHellings, Geert
dc.contributor.authorBrunco, David
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorCaymax, Matty
dc.contributor.authorClaeys, Cor
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T22:06:41Z
dc.date.available2021-10-17T22:06:41Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15276
dc.sourceIIOimport
dc.titleDefects, junction leakage and electrical performance of Ge pFET devices
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage195
dc.source.endpage205
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-band CMOS. 5: New Material, Processing, and Equipment
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 19, Issue 1


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