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Electrical transport characterization of nano CMOS devices with ultra-thin silicon film

dc.contributor.authorGhibaudo, G.
dc.contributor.authorMouis, M.
dc.contributor.authorPham-Nguyen, L.
dc.contributor.authorBennamane, K.
dc.contributor.authorPappas, I.
dc.contributor.authorCros, A.
dc.contributor.authorBidal, G.
dc.contributor.authorFleury, D.
dc.contributor.authorClaverie, A.
dc.contributor.authorBenassayag, G.
dc.contributor.authorFazzini, P.-F.
dc.contributor.authorFenouillet-Beranger, C.
dc.contributor.authorMonfray, S.
dc.contributor.authorBoeuf, F.
dc.contributor.authorCristoloveanu, S.
dc.contributor.authorSkotnicki, T.
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-17T22:21:29Z
dc.date.available2021-10-17T22:21:29Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15344
dc.sourceIIOimport
dc.titleElectrical transport characterization of nano CMOS devices with ultra-thin silicon film
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage58
dc.source.endpage63
dc.source.conference9th International Workshop on Junction Technology - IWJT
dc.source.conferencedate11/06/2009
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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