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Next generation bulk FinFET devices and their benefits for ESD robustness

dc.contributor.authorGriffoni, Alessio
dc.contributor.authorThijs, Steven
dc.contributor.authorRuss, Christian
dc.contributor.authorTrémouilles, David
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMeneghesso, Gaudentio
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T22:34:21Z
dc.date.available2021-10-17T22:34:21Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15399
dc.sourceIIOimport
dc.titleNext generation bulk FinFET devices and their benefits for ESD robustness
dc.typeProceedings paper
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2A.1
dc.source.conference31st Annual EOS/ESD Symposium
dc.source.conferencedate30/08/2009
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - open access


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