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Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness

dc.contributor.authorGriffoni, Alessio
dc.contributor.authorThijs, Steven
dc.contributor.authorRuss, Christian
dc.contributor.authorTremouilles, David
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T22:34:37Z
dc.date.available2021-10-17T22:34:37Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15400
dc.sourceIIOimport
dc.titleNext generation FinFET devices in bulk silicon technology and their benefits for ESD robustness
dc.typeProceedings paper
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.conferenceRCJ Symposium
dc.source.conferencedate22/10/2009
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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