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Characterizing the two-dimensional doping concentration inside silicon-nanowires using scanning spreading resistance microscopy

dc.contributor.authorHantschel, Thomas
dc.contributor.authorSchulz, Volker
dc.contributor.authorSchulze, Andreas
dc.contributor.authorAngeletti, Esteban
dc.contributor.authorGuder, Firat
dc.contributor.authorSchmidt, Volker
dc.contributor.authorSenz, Stephan
dc.contributor.authorEyben, Pierre
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-17T22:42:35Z
dc.date.available2021-10-17T22:42:35Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15433
dc.sourceIIOimport
dc.titleCharacterizing the two-dimensional doping concentration inside silicon-nanowires using scanning spreading resistance microscopy
dc.typeProceedings paper
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.source.peerreviewyes
dc.source.beginpage1178-AA05-03
dc.source.conferenceSemiconductor Nanowires - Growth,Size-Dependent Properties, and Applications
dc.source.conferencedate13/04/2009
dc.source.conferencelocationSan Francisco, CA California
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1178E


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