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High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS

dc.contributor.authorHeyns, Marc
dc.contributor.authorBellenger, Florence
dc.contributor.authorBrammertz, Guy
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDelabie, Annelies
dc.contributor.authorEneman, Geert
dc.contributor.authorHoussa, Michel
dc.contributor.authorLin, Dennis
dc.contributor.authorMartens, Koen
dc.contributor.authorMerckling, Clement
dc.contributor.authorMeuris, Marc
dc.contributor.authorMitard, Jerome
dc.contributor.authorPenaud, Julien
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorScarrozza, Marco
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWang, Wei-E
dc.date.accessioned2021-10-17T22:54:25Z
dc.date.available2021-10-17T22:54:25Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15476
dc.sourceIIOimport
dc.titleHigh-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
dc.typeProceedings paper
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage51
dc.source.endpage65
dc.source.conferenceHigh Dielectric Constant Materials and Gate Stacks 7
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 25; Issue 6


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