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Strain measurements in transistors by dark-field holography

dc.contributor.authorHue, Florent
dc.contributor.authorHoudellier, F.
dc.contributor.authorBender, Hugo
dc.contributor.authorSnoeck, E.
dc.contributor.authorHytch, M.J.
dc.date.accessioned2021-10-17T23:01:59Z
dc.date.available2021-10-17T23:01:59Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15505
dc.sourceIIOimport
dc.titleStrain measurements in transistors by dark-field holography
dc.typeOral presentation
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewno
dc.source.conferenceMicroscopy of Semiconducting Materials MSM XVI
dc.source.conferencedate17/03/2009
dc.source.conferencelocationOxford UK
imec.availabilityPublished - imec


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