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Investigation of mask defect density in full field EUV lithography

dc.contributor.authorJonckheere, Rik
dc.contributor.authorVan Den Heuvel, Dieter
dc.contributor.authorLamantia, Matthew
dc.contributor.authorHermans, Jan
dc.contributor.authorHendrickx, Eric
dc.contributor.authorGoethals, Mieke
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorRonse, Kurt
dc.date.accessioned2021-10-17T23:13:51Z
dc.date.available2021-10-17T23:13:51Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15549
dc.sourceIIOimport
dc.titleInvestigation of mask defect density in full field EUV lithography
dc.typeProceedings paper
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorVan Den Heuvel, Dieter
dc.contributor.imecauthorHermans, Jan
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.contributor.orcidimecHermans, Jan::0000-0003-1249-8902
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Symposium on Extreme Ultraviolet Lithography
dc.source.conferencedate18/10/2009
dc.source.conferencelocationPrague Czech Republic
imec.availabilityPublished - open access
imec.internalnotese-proceedings Sematech-website


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