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1.9 nm wide ultra-high aspect-ratio bulk-Si FinFETs

dc.contributor.authorJovanovic, VladimirFaculty of Electrical
dc.contributor.authorPoljak, Mirko
dc.contributor.authorSuligoj, Tomislav
dc.contributor.authorCivale, Yann
dc.contributor.authorNanver, Lis
dc.date.accessioned2021-10-17T23:14:52Z
dc.date.available2021-10-17T23:14:52Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15553
dc.sourceIIOimport
dc.title1.9 nm wide ultra-high aspect-ratio bulk-Si FinFETs
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.conference67th Device Research Conference
dc.source.conferencedate22/06/2009
dc.source.conferencelocationState College, PA USA
imec.availabilityPublished - imec


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