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Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

dc.contributor.authorMaji, D.
dc.contributor.authorCrupi, F.
dc.contributor.authorMagnone, P.
dc.contributor.authorGiusi, G.
dc.contributor.authorPace, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRao, V.Ramgopal
dc.date.accessioned2021-10-18T00:25:15Z
dc.date.available2021-10-18T00:25:15Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15790
dc.sourceIIOimport
dc.titleCharacterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference2nd International Workshop on Electron Devices and Semiconductor Technology - IEDST
dc.source.conferencedate1/06/2009
dc.source.conferencelocationMumbai India
imec.availabilityPublished - imec


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