dc.contributor.author | Marcon, Denis | |
dc.contributor.author | Van Hove, Marleen | |
dc.contributor.author | Visalli, Domenica | |
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Das, Jo | |
dc.contributor.author | Medjdoub, Farid | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Mertens, Robert | |
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-18T00:35:42Z | |
dc.date.available | 2021-10-18T00:35:42Z | |
dc.date.issued | 2009 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/15823 | |
dc.source | IIOimport | |
dc.title | Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Marcon, Denis | |
dc.contributor.imecauthor | Mertens, Robert | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | no | |
dc.source.beginpage | 816 | |
dc.source.endpage | 817 | |
dc.source.conference | International Conference on Solid-State Devices and Materials Conference - SSDM | |
dc.source.conferencedate | 7/10/2009 | |
dc.source.conferencelocation | Sendai Japan | |
imec.availability | Published - imec | |