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Seed layer and multistack approaches to reduce leakage in SrTiO3-based MIM capacitors using TiN bottom electrode

dc.contributor.authorMenou, Nicolas
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorOpsomer, Karl
dc.contributor.authorKaczer, Ben
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorFranquet, Alexis
dc.contributor.authorDetavernier, Christophe
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWouters, Dirk
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-18T00:44:45Z
dc.date.available2021-10-18T00:44:45Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15851
dc.sourceIIOimport
dc.titleSeed layer and multistack approaches to reduce leakage in SrTiO3-based MIM capacitors using TiN bottom electrode
dc.typeProceedings paper
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage148
dc.source.endpage149
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate6/10/2009
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - open access


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