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Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures

dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorBellenger, Florence
dc.contributor.authorKohen, David
dc.contributor.authorBrammertz, Guy
dc.contributor.authorAlian, AliReza
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorScarrozza, Marco
dc.contributor.authorHoussa, Michel
dc.contributor.authorEl-Kazzi, Mario
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T00:45:33Z
dc.date.available2021-10-18T00:45:33Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15853
dc.sourceIIOimport
dc.titleMolecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
dc.typeProceedings paper
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpageC06.07
dc.source.conferenceCMOS Gate Stack Scaling. Materials, Interfaces, and Reliability
dc.source.conferencedate13/04/2009
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1155


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