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Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI
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Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI
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Date
2009
Proceedings Paper
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17946.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
Shea, C.
;
De Jaeger, Brice
;
Pristera, Andrea
;
Wang, Gang
;
Houssa, Michel
;
Eneman, Geert
;
Hellings, Geert
;
Wang, Wei-E
;
Lin, J.C.
;
Leys, Frederik
;
Loo, Roger
;
Winderickx, Gillis
;
Vrancken, Evi
;
Stesmans, Andre
;
De Meyer, Kristin
;
Caymax, Matty
;
Pantisano, Luigi
;
Meuris, Marc
;
Heyns, Marc
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1855
since deposited on 2021-10-18
Acq. date: 2026-01-07
Citations
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Views
1855
since deposited on 2021-10-18
Acq. date: 2026-01-07
Citations