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Ge-based passivation for high permittivity oxide deposition on III-V compounds substrates

dc.contributor.authorMolle, A.
dc.contributor.authorSpiga, S.
dc.contributor.authorLamagna, L.
dc.contributor.authorFanciulli, M.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-18T00:55:44Z
dc.date.available2021-10-18T00:55:44Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15883
dc.sourceIIOimport
dc.titleGe-based passivation for high permittivity oxide deposition on III-V compounds substrates
dc.typeMeeting abstract
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage158
dc.source.conferenceAbstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6
dc.source.conferencedate17/05/2009
dc.source.conferencelocationLos Angeles,CA USA
imec.availabilityPublished - open access


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