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Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates

dc.contributor.authorMolle, Alessandro
dc.contributor.authorBrammertz, Guy
dc.contributor.authorLamagna, Luca
dc.contributor.authorSpiga, Sabina
dc.contributor.authorMeuris, Marc
dc.contributor.authorFanciulli, Marco
dc.date.accessioned2021-10-18T00:56:04Z
dc.date.available2021-10-18T00:56:04Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15884
dc.sourceIIOimport
dc.titleInterface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates
dc.typeProceedings paper
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage1194-A08-10
dc.source.conferenceHigh-k Dielectrics on Semiconductors with High Carrier Mobility
dc.source.conferencedate30/11/2009
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1194


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