Show simple item record

Zero-bias Si backward diodes detectors incorporating P and B delta-doping layers grown by chemical vapor deposition

dc.contributor.authorPark, Si-Young
dc.contributor.authorAnisha, R.
dc.contributor.authorJiang, Sheng
dc.contributor.authorBerger, Paul
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-18T01:29:35Z
dc.date.available2021-10-18T01:29:35Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15980
dc.sourceIIOimport
dc.titleZero-bias Si backward diodes detectors incorporating P and B delta-doping layers grown by chemical vapor deposition
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate9/12/2009
dc.source.conferencelocationCollege Park, MD USA
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record