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Extreme scaled gate dielectrics by using ALD Hf-based composite materials

dc.contributor.authorPierreux, Dieter
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTois, E.
dc.contributor.authorSwerts, Johan
dc.contributor.authorSchram, Tom
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorTseng, Joshua
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMaes, Jan
dc.date.accessioned2021-10-18T01:43:11Z
dc.date.available2021-10-18T01:43:11Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16019
dc.sourceIIOimport
dc.titleExtreme scaled gate dielectrics by using ALD Hf-based composite materials
dc.typeMeeting abstract
dc.contributor.imecauthorPierreux, Dieter
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMaes, Jan
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2037
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesMeeting Abstracts; Vol. 25, issue 4


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