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Single-metal dual-dielectric (SMDD) gate-first CMOS integration towards low VT and high performance

dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorRohr, Erika
dc.contributor.authorSebaai, Farid
dc.contributor.authorKelkar, Prasad
dc.contributor.authorWada, Masayuki
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKubicek, Stefan
dc.contributor.authorLauwers, Anne
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-18T02:08:38Z
dc.date.available2021-10-18T02:08:38Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16086
dc.sourceIIOimport
dc.titleSingle-metal dual-dielectric (SMDD) gate-first CMOS integration towards low VT and high performance
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.beginpage49
dc.source.endpage50
dc.source.conferenceInternationa l Symposium on VLSI Technology, systems and Applications - VLSI-TSA
dc.source.conferencedate27/04/2009
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec


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