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Transmission electron diffraction techniques for nm scale strain measurements in semiconductors

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorJanssens, Koenraad
dc.contributor.authorFrabboni, S.
dc.contributor.authorSmeys, Peter
dc.contributor.authorBalboni, R.
dc.contributor.authorArmigliato, A.
dc.date.accessioned2021-09-29T15:44:25Z
dc.date.available2021-09-29T15:44:25Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1609
dc.sourceIIOimport
dc.titleTransmission electron diffraction techniques for nm scale strain measurements in semiconductors
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage435
dc.source.endpage446
dc.source.conferenceSurface/Interface and stress Effects in Electronic Material Nanostructures
dc.source.conferencedate27/11/1995
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 405


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