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Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorClauws, P.
dc.contributor.authorKaniava, Arvydas
dc.contributor.authorLibezny, Milan
dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRichter, H.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T15:44:37Z
dc.date.available2021-09-29T15:44:37Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1610
dc.sourceIIOimport
dc.titleInfrared studies of oxygen precipitation related defects in silicon after various thermal treatments
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage229
dc.source.endpage234
dc.source.conferenceProceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95
dc.source.conferencedate2/09/1995
dc.source.conferencelocationBerlin Gerany
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 47-48


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