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Impact of the TiN layer thickness on the low-frequency noise and static device performance of n-channel MuGFETs

dc.contributor.authorRodrigues, Michele
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-18T02:18:27Z
dc.date.available2021-10-18T02:18:27Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16111
dc.sourceIIOimport
dc.titleImpact of the TiN layer thickness on the low-frequency noise and static device performance of n-channel MuGFETs
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage167
dc.source.endpage170
dc.source.conference20th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate14/06/2009
dc.source.conferencelocationPisa Italy
imec.availabilityPublished - open access
imec.internalnotesAIP Conference Proceedings; Vol. 1129


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