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Analysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping technique

dc.contributor.authorRodrigues, Michele
dc.contributor.authorCho, Moon Ju
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T02:19:15Z
dc.date.available2021-10-18T02:19:15Z
dc.date.issued2009-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16113
dc.sourceIIOimport
dc.titleAnalysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping technique
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage559
dc.source.endpage565
dc.source.conference24th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate31/08/2009
dc.source.conferencelocationNatal Brazil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 23, Issue 1


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