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Light scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorGräf, D.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorMertens, Paul
dc.contributor.authorLambert, U.
dc.contributor.authorHeyns, Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorRichter, H.
dc.contributor.authorWagner, P.
dc.date.accessioned2021-09-29T15:44:50Z
dc.date.available2021-09-29T15:44:50Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1611
dc.sourceIIOimport
dc.titleLight scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation
dc.typeProceedings paper
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage331
dc.source.endpage336
dc.source.conferenceDefect Recognition and Image Processing in Semiconductors - DRIP. Proceedings of the 6th International Conference
dc.source.conferencedate3/12/1995
dc.source.conferencelocationBoulder, CO USA
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Proceedings; Vol. 149


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