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Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorGräf, D.
dc.contributor.authorLambert, U.
dc.contributor.authorWagner, P.
dc.date.accessioned2021-09-29T15:45:01Z
dc.date.available2021-09-29T15:45:01Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1612
dc.sourceIIOimport
dc.titleCorrelation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics
dc.typeMeeting abstract
dc.contributor.imecauthorKenis, Karine
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceBelgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering
dc.source.conferencedate6/06/1996
dc.source.conferencelocationBrussel Belgium
imec.availabilityPublished - open access


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