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On the impact of grown-in substrate defects and iron contamination on gate oxide integrity

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorGräf, D.
dc.contributor.authorLambert, U.
dc.contributor.authorWagner, Patrick
dc.date.accessioned2021-09-29T15:45:15Z
dc.date.available2021-09-29T15:45:15Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1613
dc.sourceIIOimport
dc.titleOn the impact of grown-in substrate defects and iron contamination on gate oxide integrity
dc.typeProceedings paper
dc.contributor.imecauthorKenis, Karine
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage313
dc.source.endpage316
dc.source.conferenceProceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate23/09/1996
dc.source.conferencelocationAntwerpen Belgium
imec.availabilityPublished - open access


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