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On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorGräf, D.
dc.contributor.authorLambert, U.
dc.contributor.authorWagner, Patrick
dc.date.accessioned2021-09-29T15:45:26Z
dc.date.available2021-09-29T15:45:26Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1614
dc.sourceIIOimport
dc.titleOn the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity
dc.typeProceedings paper
dc.contributor.imecauthorKenis, Karine
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage493
dc.source.endpage500
dc.source.conferenceEarly Stages of Oxygen Precipitation in Silicon; NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Sili
dc.source.conferencedate26/03/1996
dc.source.conferencelocationExeter UK
imec.availabilityPublished - open access
imec.internalnotesNato Science Partnership Subseries: 3, Vol. 17


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