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Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorAkheyar, Amal
dc.contributor.authorRohr, Erika
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T03:02:51Z
dc.date.available2021-10-18T03:02:51Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16222
dc.sourceIIOimport
dc.titleLow-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage237
dc.source.endpage245
dc.source.conferenceULSI Process Integration 6
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 25, Issue 7


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