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A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs

dc.contributor.authorVasina, Petr
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSikula, J.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T15:47:23Z
dc.date.available2021-09-29T15:47:23Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1625
dc.sourceIIOimport
dc.titleA low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageCM-P-36
dc.source.conferenceBelgische natuurkundige vereniging. Algemene Wetenschappelijke Vergadering
dc.source.conferencedate6/06/1996
dc.source.conferencelocationBrussel Belgium
imec.availabilityPublished - open access


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