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Resolving fast VtH transients after program/erase of flash memory stacks and their relation to electron and hole defects

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZahid, Mohammed
dc.contributor.authorKaczer, Ben
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-18T03:39:47Z
dc.date.available2021-10-18T03:39:47Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16314
dc.sourceIIOimport
dc.titleResolving fast VtH transients after program/erase of flash memory stacks and their relation to electron and hole defects
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage749
dc.source.endpage752
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2009
dc.source.conferencelocationBaltimore, MD US
imec.availabilityPublished - open access


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