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Characterization of 248nm deep ultraviolet (DUV) photoresist after ion implantation

dc.contributor.authorTsvetanova, Diana
dc.contributor.authorVos, Rita
dc.contributor.authorVereecke, Guy
dc.contributor.authorClemente, Francesca
dc.contributor.authorVanstreels, Kris
dc.contributor.authorConard, Thierry
dc.contributor.authorVogt, Tatjana
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T03:46:27Z
dc.date.available2021-10-18T03:46:27Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16330
dc.sourceIIOimport
dc.titleCharacterization of 248nm deep ultraviolet (DUV) photoresist after ion implantation
dc.typeProceedings paper
dc.contributor.imecauthorTsvetanova, Diana
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorVereecke, Guy
dc.contributor.imecauthorVanstreels, Kris
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.contributor.orcidimecVanstreels, Kris::0000-0002-4420-0966
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage187
dc.source.endpage194
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 25


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