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High depth resolution depth profile analysis of ultra thin high-k Hf based films using MEIS compared with XTEM, XRF, SE and XPS

dc.contributor.authorvan den Berg, J.A.
dc.contributor.authorReading, M. A.
dc.contributor.authorParisini, A.
dc.contributor.authorKolbe, M.
dc.contributor.authorBeckhoff, B.
dc.contributor.authorLadas, S.
dc.contributor.authorFried, M.
dc.contributor.authorPetrik, P.
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T.
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T03:59:06Z
dc.date.available2021-10-18T03:59:06Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16361
dc.sourceIIOimport
dc.titleHigh depth resolution depth profile analysis of ultra thin high-k Hf based films using MEIS compared with XTEM, XRF, SE and XPS
dc.typeProceedings paper
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage349
dc.source.endpage361
dc.source.conferenceAnalytical Techniques for Semiconductor Materials and Process Characterization 6
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 25, issue 3


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