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dc.contributor.authorVeloso, Anabela
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVan Dal, Mark
dc.contributor.authorDuffy, Ray
dc.contributor.authorPawlak, Bartek
dc.contributor.authorLander, Rob
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T04:37:25Z
dc.date.available2021-10-18T04:37:25Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16453
dc.sourceIIOimport
dc.titleAdvanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage45
dc.source.endpage54
dc.source.conferenceSilicon-on-Insulator Technology and Devices 14
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 19, Iss.4


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