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Defect study of polycrystalline-silicon seed layers made by aluminum induced crystallization

dc.contributor.authorVenkatachalam, Srisaran
dc.contributor.authorVan Gestel, Dries
dc.contributor.authorGordon, Ivan
dc.date.accessioned2021-10-18T04:40:15Z
dc.date.available2021-10-18T04:40:15Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16458
dc.sourceIIOimport
dc.titleDefect study of polycrystalline-silicon seed layers made by aluminum induced crystallization
dc.typeProceedings paper
dc.contributor.imecauthorGordon, Ivan
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.source.peerreviewno
dc.source.beginpage1153-A16-02
dc.source.conferenceAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
dc.source.conferencedate13/04/2009
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1153


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