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Study of the interplay between dry etch and wet clean in patterning La2O3/HfO2 containing high-k/metal gate stacks

dc.contributor.authorVos, Ingrid
dc.contributor.authorHellin, David
dc.contributor.authorVrancken, Christa
dc.contributor.authorVecchio, Emma
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorVertommen, Johan
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-18T05:01:07Z
dc.date.available2021-10-18T05:01:07Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16506
dc.sourceIIOimport
dc.titleStudy of the interplay between dry etch and wet clean in patterning La2O3/HfO2 containing high-k/metal gate stacks
dc.typeMeeting abstract
dc.contributor.imecauthorVos, Ingrid
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2056
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesMeeting Abstracts; Vol. MA2009-02


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