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dc.contributor.authorVos, Ingrid
dc.contributor.authorHellin, David
dc.contributor.authorVrancken, Christa
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorVecchio, Emma
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorVertommen, Johan
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-18T05:01:36Z
dc.date.available2021-10-18T05:01:36Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16507
dc.sourceIIOimport
dc.titleInterplay between dry etch and wet clean in patterning La2O3/HfO2-containing high-k/metal gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorVos, Ingrid
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVertommen, Johan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage29
dc.source.endpage36
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 25, issue 5


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