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New wet process strategies for reduced La2O3 and MgO2 high-k cap-dielectric loss

dc.contributor.authorWada, Masayuki
dc.contributor.authorVos, Rita
dc.contributor.authorClaes, Martine
dc.contributor.authorSchram, Tom
dc.contributor.authorSnow, J.
dc.contributor.authorMertens, Paul
dc.contributor.authorEitoku, A.
dc.date.accessioned2021-10-18T05:05:06Z
dc.date.available2021-10-18T05:05:06Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16515
dc.sourceIIOimport
dc.titleNew wet process strategies for reduced La2O3 and MgO2 high-k cap-dielectric loss
dc.typeProceedings paper
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorMertens, Paul
dc.source.peerreviewno
dc.source.beginpage45
dc.source.endpage51
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
dc.source.conferencedate5/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 25, issue 5


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